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KMID : 0381920150450010016
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Korean Journal of Microscopy
2015 Volume.45 No. 1 p.16 ~ p.22
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In Situ Transmission Electron Microscopy Study on the Reaction Kinetics of the Ni/Zr-interlayer/Ge System
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Lee Jae-Wook
Bae Jee-Hwan
Kim Tae-Hoon
Keesam Shin
Lee Je-Hyun
Yang Cheol-Woong
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Abstract
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The reaction kinetics of the growth of Ni germanide in the Ni/Zr-interlayer/Ge system was investigated using isothermal in situ annealing at three different temperatures in a transmission electron microscope. The growth rate of Ni germanide in the Ni/Zrinterlayer/Ge system was determined to be diffusion controlled and depended on the square root of the time, with the activation energy of 1.04±0.04 eV. For the Ni/Zrinterlayer/Ge system, no intermediate or intermixing layer between the Zr-interlayer and Ge substrate was formed, and thus the Ni germanide was formed and grew uniformly due to Ni diffusion through the diffusion path created in the amorphous Zr-interlayer during the annealing process in the absence of any intermetallic compounds. The reaction kinetics in the Ni/Zr-interlayer/Ge system was affected only by the Zr-interlayer.
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KEYWORD
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Kinetics, Ni germanide, Zr-interlayer, Isothermal annealing, In situ transmission
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